kw.\*:("resonant tunneling effect")
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Effet tunnel résonnant en spectroscopie des métauxSVISTUNOV, V. M; BELOGOLOVSKIJ, M. A.Fizika tverdogo tela. 1986, Vol 28, Num 1, pp 284-285, issn 0367-3294Article
Modelling of complicated nanometre resonant tunnelling devices with quantum dotsSUMETSKII, M.Journal of physics. Condensed matter (Print). 1991, Vol 3, Num 16, pp 2651-2664, issn 0953-8984, 14 p.Article
Reduced phonon scattering in an asymmetric triple barrier resonant-tunneling diode at high magnetic fieldsSTRUTZ, Thomas; TAKAMASU, Tadashi; SAKAKI, Hiroyuki et al.Journal of the Physical Society of Japan. 2006, Vol 75, Num 11, issn 0031-9015, 114702.1-114702.5Article
Circuit simulation of resonant tunneling double-barrier diodeLIU, H. C.Journal of applied physics. 1988, Vol 64, Num 9, pp 4792-4794, issn 0021-8979Article
Time-dependent modeling of resonant-tunneling diodes from direct solution of the Schrödinger equationMAINS, R. K; HADDAD, G. I.Journal of applied physics. 1988, Vol 64, Num 7, pp 3564-3569, issn 0021-8979Article
Resonant tunneling transistor with quantum well base and high-energy injection: a new negative differential resistance deviceCAPASSO, F; KIEHL, R. A.Journal of applied physics. 1985, Vol 58, Num 3, pp 1366-1368, issn 0021-8979Article
Influence of scattering on the I-V characteristics of double-barrier resonant-tunneling diodesVAN DE ROER, T. G; KWASPEN, J. J. M; JOOSTEN, H et al.Physica. B, Condensed matter. 1991, Vol 175, Num 1-3, pp 301-306, issn 0921-4526Conference Paper
Resonant tunneling in double-barrier parabolic well structuresNEOFOTISTOS, G; HONG GUO; DIFF, K et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 745-749, issn 0018-9383, 5 p.Article
A resonant-tunneling bipolar transistor (RBT)―a new functional device with high current gainFUTATSUGI, T; YAMAGUCHI, Y; IMAMURA, K et al.Japanese journal of applied physics. 1987, Vol 26, Num 2, pp L131-L133, issn 0021-4922, 2Article
Evidence for resonant tunneling of electrons via sodium ions in silicon dioxideKOCH, R. H; HARTSTEIN, A.Physical review letters. 1985, Vol 54, Num 16, pp 1848-1851, issn 0031-9007Article
Resonant tunnelling through a symmetric double wellPAYNE, M. C.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 27, pp L879-L883, issn 0022-3719Article
Resonant tunneling with mass variation in rectangular n-fold barrier structuresYAMAMOTO, H; KANIE, Y; SANO, H et al.Physica status solidi. B. Basic research. 1992, Vol 169, Num 1, pp K17-K21, issn 0370-1972Article
A new functional, resonant-tunneling hot electron transistor (RHET)YOKOYAMA, N; IMAMURA, K; MUTO, S et al.Japanese journal of applied physics. 1985, Vol 24, Num 11, pp L853-L854, issn 0021-4922, 2Article
Persistent photoconductivity in quantum well resonatorsSOLLNER, T. C. L. G; LE, H. Q; CORREA, C. A et al.Applied physics letters. 1985, Vol 47, Num 1, pp 36-38, issn 0003-6951Article
Resonant tunneling through a Si/GexSi1-x/Si heterostructure on a GeSi buffer layerRHEE, S. S; PARK, J. S; KARUNASIRI, R. P. G et al.Applied physics letters. 1988, Vol 53, Num 3, pp 204-206, issn 0003-6951Article
Resonant tunnelling gate field-effect transistorCAPASSO, F; SEN, S; BELTRAM, F et al.Electronics Letters. 1987, Vol 23, Num 5, pp 225-226, issn 0013-5194Article
Transfer Hamiltonian description of resonant tunnellingPAYNE, M. C.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 8, pp 1145-1155, issn 0022-3719Article
Observation of intrinsic bistability in resonant tunneling diode modelingMAINS, R. K; SUN, J. P; HADDAD, G. I et al.Applied physics letters. 1989, Vol 55, Num 4, pp 371-373, issn 0003-6951, 3 p.Article
Ballistic transport through a quantum point contact : elastic scattering by impuritiesTEKMAN, E; CIRACI, S.Physical review. B, Condensed matter. 1990, Vol 42, Num 14, pp 9098-9103, issn 0163-1829, 6 p.Article
Resonant tunneling permeable base transistor based pulsed oscillatorLIND, Erik; LINDSTRÖM, Peter; NAUEN, André et al.DRC : Device research conference. 2004, pp 129-130, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper
Effects of morphology on photoemission oscillation measurements during growth of resonant tunneling devicesZINCK, J. J; CHOW, D. H.Journal of crystal growth. 1997, Vol 175-76, pp 323-327, issn 0022-0248, 1Conference Paper
Bohm trajectories and their potential use for the Monte Carlo simulation of resonant tunnelling diodesSUNE, J; ORIOLS, X; MARTIN, F et al.Applied surface science. 1996, Vol 102, pp 255-258, issn 0169-4332Conference Paper
Double-barrier resonant tunneling transport modelYUMING HU; STAPLETON, S. P.IEEE journal of quantum electronics. 1993, Vol 29, Num 2, pp 327-339, issn 0018-9197Article
Selective etching of SiGe on SiGe/Si heterostructuresCHANG, G. K; CARNS, T. K; RHEE, S. S et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 1, pp 202-204, issn 0013-4651Article
Width anomaly in resonant tunneling structuresPANDEY, L. N; GEORGE, T. F; SAHU, D et al.Solid state communications. 1991, Vol 79, Num 5, pp 399-402, issn 0038-1098Article